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參數(shù)資料
| 型號： | K9F2808U0B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory(16M x 8位與非閃速存儲器) |
| 中文描述： | 1,600 × 8位NAND閃存（1,600 × 8位與非閃速存儲器） |
| 文件頁數(shù)： | 28/29頁 |
| 文件大?。?/td> | 604K |
| 代理商： | K9F2808U0B |
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FLASH MEMORY
28
K9F2808Q0B:Preliminary
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 13). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp(min, 1.8V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
1.8V
3mA
+
Σ
I
L
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp
t
I
Rp(ohm)
Ibusy
tr
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
ibusy
Rp(min, 3.3V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
2.0V
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
96
tf
189
290
381
4.2
4.2
4.2
4.2
3.3
1.65
1.1
0.825
0.8V
Figure 13. Rp vs tr ,tf & Rp vs ibusy
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2816U0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816U0C-YIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816U0C-HIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2816U0C-PCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808Q0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0B-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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