參數(shù)資料
型號(hào)： K9F2808U0B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory(16M x 8位與非閃速存儲(chǔ)器)
中文描述： 1,600 × 8位NAND閃存（1,600 × 8位與非閃速存儲(chǔ)器）
文件頁數(shù)： 10/29頁
文件大?。?/td> 604K
代理商： K9F2808U0B
FLASH MEMORY
10
K9F2808Q0B:Preliminary
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and VccQ pins. During transitions, this level may undershoot to -2.0V for periods
<20ns. Maximum DC voltage on input/output pins is V
CCQ
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F2808Q0B(1.8V)
K9F2808U0B(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
V
CC
Q
-0.2 to + 2.45
-0.6 to + 4.6
V
Temperature
Under Bias
K9F2808X0B-YCB0,DCB0
T
BIAS
-10 to + 125
°
C
K9F2808X0B-YIB0,DIB0
-40 to + 125
Storage Temperature
T
STG
-65 to + 150
°
C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2808X0B-YCB0,DCB0:T
A
=0 to 70
°
C, K9F2808X0B-YIB0,DIB0:T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F2808Q0B(1.8V)
K9F2808U0B(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.7
1.8
1.9
2.7
3.3
3.6
V
Supply Voltage
V
CC
Q
1.7
1.8
1.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Sym-
bol
Test Conditions
K9F2808Q0B(1.8V)
K9F2808U0B(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
CE=V
IL,
I
OUT
=0mA
K9F2808Q0B: tRC=70ns
K9F2808U0B: tRC=50ns
-
5
15
-
10
20
mA
Program
I
CC
2
-
-
5
15
-
10
20
Erase
I
CC
3
-
-
5
15
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH
I/O pins
VccQ-0.4
VccQ
+0.3
2.0
-
V
CC
Q+0.3
V
Except I/O pins
V
CC
-0.4
-
VCC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F2808Q0B :I
OH
=-100
μ
A
K9F2808U0B :I
OH
=-400
μ
A
V
CC
Q-
0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F2808Q0B :I
OL
=100uA
K9F2808U0B :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F2808Q0B :V
OL
=0.1V
K9F2808U0B :V
OL
=0.4V
3
4
-
8
10
-
mA
相關(guān)PDF資料
PDF描述
K9F2816U0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-YIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-HIB0 16M x 8 Bit NAND Flash Memory
K9F2816U0C-PCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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