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參數(shù)資料
| 型號(hào)： | K9E2G08U0M-YIB00 |
| 元件分類： | PROM |
| 英文描述： | 256M X 8 FLASH 2.7V PROM, 30 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 |
| 文件頁(yè)數(shù)： | 32/38頁(yè) |
| 文件大?。?/td> | 888K |
| 代理商： | K9E2G08U0M-YIB00 |
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FLASH MEMORY
38
K9E2G08U0M
Preliminary
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL
during power-up and power-down. A recovery time of minimum 10
s is required before internal circuit gets ready for any command
sequences as shown in Figure 24. The two step command sequence for program/erase provides additional software protection.
Figure 24. AC Waveforms for Power Transition
VCC
WP
High
≈
WE
Data Protection & Power-up sequence
~ 2.5V
10
s
≈
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相關(guān)代理商/技術(shù)參數(shù) |
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| K9F1208B0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208B0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory |
| K9F1208B0C-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208D0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208D0A-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
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