參數(shù)資料
型號(hào): K7A801800M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx36 & 512Kx18 Synchronous SRAM
中文描述: 256Kx36
文件頁數(shù): 6/21頁
文件大?。?/td> 542K
代理商: K7A801800M
K7A801800M
256Kx36 & 512Kx18 Synchronous SRAM
- 6 -
Rev 6.0
March 2000
K7A803600M
K7A801800M(512Kx18)
Note :
* A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
1
2
3
4
5
6
7
A
V
DDQ
A
A
ADSP
A
A
V
DDQ
B
NC
CS
2
A
ADSC
A
A
NC
C
NC
A
A
V
DD
A
A
NC
D
DQb
NC
V
SS
NC
V
SS
DQPa
NC
E
NC
DQb
V
SS
CS
1
V
SS
NC
DQa
F
V
DDQ
NC
V
SS
OE
V
SS
DQa
V
DDQ
G
NC
DQb
WEb
ADV
V
SS
NC
DQa
H
DQb
NC
V
SS
GW
V
SS
DQa
NC
J
V
DDQ
V
DD
NC
V
DD
NC
V
DD
V
DDQ
K
NC
DQb
V
SS
CLK
V
SS
NC
DQa
L
DQb
NC
V
SS
NC
WEa
DQa
NC
M
V
DDQ
DQb
V
SS
BW
V
SS
NC
V
DDQ
N
DQb
NC
V
SS
A
1
*
V
SS
DQa
NC
P
NC
DQPb
V
SS
A
0
*
V
SS
NC
DQa
R
NC
A
LBO
V
DD
NC
A
NC
T
NC
A
A
NC
A
A
ZZ
U
V
DDQ
NC
NC
NC
NC
NC
V
DDQ
119BGA PACKAGE PIN CONFIGURATIONS
(TOP VIEW)
PIN NAME
SYMBOL
PIN NAME
SYMBOL
PIN NAME
A
A
0
,A
1
ADV
ADSP
ADSC
CLK
CS
1
CS
2
WEx
(x=a,b)
OE
GW
BW
ZZ
LBO
Address Inputs
Burst Count Address
Burst Address Advance
Address Status Processor
Address Status Controller
Clock
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
V
DD
V
SS
N.C.
DQa
DQb
DQPa~Pb
V
DDQ
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outpus
Output Power Supply
(2.5V or 3.3V)
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