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參數資料
| 型號： | K7A801800B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18 Synchronous SRAM |
| 中文描述： | 256Kx36 |
| 文件頁數： | 9/18頁 |
| 文件大?。?/td> | 401K |
| 代理商： | K7A801800B |
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
- 9 -
Rev 3.0
Nov. 2003
K7A803600B
DC ELECTRICAL CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
°
C to +70
°
C)
Notes :
1.The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current(except ZZ)
I
IL
V
DD
= Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
Output Leakage Current
I
OL
Output Disabled, V
OUT
=V
SS
to V
DDQ
-2
+2
μ
A
Operating Current
I
CC
Device Selected, I
OUT
=0mA,
ZZ
≤
V
IL ,
Cycle Time
≥
t
CYC
Min
-16
-
350
mA
1,2
-14
-
300
Standby Current
I
SB
Device deselected, I
OUT
=0mA, ZZ
≤
V
IL
,
f=Max, All Inputs
≤
0.2V or
≥
V
DD
-0.2V
-16
-
130
mA
-14
-
120
I
SB1
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V,
f = 0, All Inputs=fixed (V
DD
-0.2V or 0.2V)
-
100
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
-
60
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3**
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3**
V
3
V
SS
V
IH
V
SS-
1.0V
20% t
CYC
(MIN)
(V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=3.3V+0.165/-0.165V or V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=2.5V+0.4V/-0.125V, T
A
=0to70
°
C)
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Value
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
V
DDQ
/2
Output Load
See Fig. 1
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