- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374292 > K7A203200B-QC(I)14 (SAMSUNG SEMICONDUCTOR CO. LTD.) 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM PDF資料下載
參數(shù)資料
| 型號： | K7A203200B-QC(I)14 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 64Kx36 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 130K |
| 代理商： | K7A203200B-QC(I)14 |
K6X8016C3B Family
Revision 1.0
September 2003
8
CMOS SRAM
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
t
WR
applied in case a write ends as CS or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
DATA RETENTION WAVE FORM
CS controlled
V
CC
4.5V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
≥
V
CC
- 0.2V
t
SDR
t
RDR
t
AS(3)
相關PDF資料 |
PDF描述 |
|---|---|
| K7A203200B-QC14 | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
| K7A401800B-QC | 128Kx36/x32 & 256Kx18 Synchronous SRAM |
| K7A401809B | 128Kx36/x32 & 256Kx18 Synchronous SRAM |
| K7A401809B-QC | 128Kx36/x32 & 256Kx18 Synchronous SRAM |
| K7A403200B | 128Kx36/x32 & 256Kx18 Synchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K7A203600 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36-Bit Synchronous Pipelined Burst SRAM |
| K7A203600A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36-Bit Synchronous Pipelined Burst SRAM |
| K7A203600A-QC14 | 制造商:Samsung Semiconductor 功能描述:Synchronous SRAM, 64K x 36, 100 Pin, Plastic, QFP |
| K7A203600B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36/x32 Synchronous SRAM |
| K7A203600B-QC(I)14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。