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參數(shù)資料
| 型號： | K7A203200B-QC(I)14 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 64Kx36 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 130K |
| 代理商： | K7A203200B-QC(I)14 |
K6X8016C3B Family
Revision 1.0
September 2003
2
CMOS SRAM
512Kx16 bit Low Power Full CMOS Static RAM
GENERAL DESCRIPTION
The K6X8016C3B families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
various operating temperature range for user flexibility of sys-
tem design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2.0V(Min)
Three state output and TTL Compatible
Package Type: 44-TSOP2-400F
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
18
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
PRO
DUCT FAMILY
1. The parameter is measured with 50pF test load.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
25μ
A
25
μ
A
40
μ
A
Operating
(I
CC2
, Max)
K6X8016C3B-B
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
Automotive(-40~125
°
C)
4.5~5.5V
55
1)
/70ns
35mA
44-TSOP2-400F
K6X8016C3B-F
K6X8016C3B-Q
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
I/O Circuit
Column select
PIN DESCRIPTION
WE
OE
UB
CS
LB
Control Logic
Row
Addresses
Column Addresses
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A18
A17
A16
A15
A14
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
A8
A9
A10
A11
A12
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A13
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PDF描述 |
|---|---|
| K7A203200B-QC14 | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
| K7A401800B-QC | 128Kx36/x32 & 256Kx18 Synchronous SRAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K7A203600 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36-Bit Synchronous Pipelined Burst SRAM |
| K7A203600A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36-Bit Synchronous Pipelined Burst SRAM |
| K7A203600A-QC14 | 制造商:Samsung Semiconductor 功能描述:Synchronous SRAM, 64K x 36, 100 Pin, Plastic, QFP |
| K7A203600B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36/x32 Synchronous SRAM |
| K7A203600B-QC(I)14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
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