參數(shù)資料
型號: K5A3380YBC-T755
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MCP MEMORY
中文描述: MCP的記憶
文件頁數(shù): 29/45頁
文件大小: 625K
代理商: K5A3380YBC-T755
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 29 -
Preliminary
Flash AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate CE
F
Controlled Writes
NOTES:
1. Not 100% tested.
2.This does not include the preprogramming time.
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Write Cycle Time (1)
t
WC
70
-
80
-
ns
Address Setup Time
t
AS
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
ns
Data Hold Time
t
DH
0
-
0
-
ns
Output Enable Setup Time (1)
t
OES
0
-
0
-
ns
Output Enable
Hold Time
Read (1)
t
OEH1
0
-
0
-
ns
Toggle and Data Polling (1)
t
OEH2
10
-
10
-
ns
WE Setup Time
t
WS
0
-
0
-
ns
WE Hold Time
t
WH
0
-
0
-
ns
CE
F
Pulse Width
t
CP
35
-
35
-
ns
CE
F
Pulse Width High
t
CPH
25
-
25
-
ns
Programming Operation
Word
t
PGM
14(typ.)
14(typ.)
μ
s
μ
s
μ
s
μ
s
Byte
9(typ.)
9(typ.)
Accelerated Programming Operation
Word
t
ACCPGM
9(typ.)
9(typ.)
Byte
7(typ.)
7(typ.)
Block Erase Operation (2)
t
BERS
0.7(typ.)
0.7(typ.)
sec
BYTE Switching Low to Output HIGH-Z
t
FLQZ
25
-
25
-
ns
ERASE AND PROGRAM PERFORMANCE
NOTES:
1. 25
°
C, Vcc
F
=
3.0V 100,000 cycles, typical pattern
.
2. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte.
In the preprogramming step of the Internal Erase Routine, all bytes are programmed to 00H before erasure.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Block Erase Time
-
0.7
15
sec
Excludes 00H programming
prior to erasure
Chip Erase Time
-
49
-
sec
Word Programming Time
-
14
330
μ
s
μ
s
μ
s
μ
s
Excludes system-level overhead
Byte Programming Time
-
9
210
Excludes system-level overhead
Accelerated Byte/Word
Program Time
Word Mode
-
9
210
Excludes system-level overhead
Byte Mode
-
7
150
Excludes system-level overhead
Chip Programming Time
Word Mode
-
28
84
sec
Excludes system-level overhead
Byte Mode
-
36
108
sec
Erase/Program Endurance
100,000
-
-
cycles
Minimum 100,000 cycles guaran-
teed
相關(guān)PDF資料
PDF描述
K5A3380YBC-T855 MCP MEMORY
K5A3380YTC-T755 MCP MEMORY
K5A3380YTC-T855 MCP MEMORY
K5A3X80YTC MCP MEMORY
K5T6432YT Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K5A3380YBC-T855 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY
K5A3380YTC-T755 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY
K5A3380YTC-T855 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY
K5A3X40YTC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3X80YTC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY