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參數(shù)資料
| 型號： | K5A3280YBC-T755 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | MCP MEMORY |
| 中文描述： | MCP的記憶 |
| 文件頁數(shù)： | 44/45頁 |
| 文件大小： | 625K |
| 代理商： | K5A3280YBC-T755 |
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MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 44 -
Preliminary
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS1
S
and low WE. A write begins when CS1
S
goes low and WE goes low with asserting
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest tran-
sition when CS1
S
goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS1
S
going low to the end of write.
3.
t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
t
WR
applied in case a write ends as CS1
S
or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
SRAM DATA RETENTION WAVE FORM
CS1
S
controlled
Vcc
S
2.7V
2.2V
V
DR
CS1
S
Vss
Data Retention Mode
CS1
S
≥
Vcc
S
- 0.2V
t
SDR
t
RDR
t
AS(3)
CS1
S
CS2
S
CS2
S
controlled
Vcc
S
2.7V
CS2
S
0.4V
Vss
V
DR
Data Retention Mode
t
SDR
t
RDR
CS2
S
≤
0.2V
t
CW(2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K5A3280YBC-T855 | MCP MEMORY |
| K5A3280YTC-T755 | MCP MEMORY |
| K5A3280YTC-T855 | MCP MEMORY |
| K5A3380YBC-T755 | MCP MEMORY |
| K5A3380YBC-T855 | MCP MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K5A3280YBC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3280YTC-T755 | 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69 |
| K5A3280YTC-T755000 | 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69 |
| K5A3280YTC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3340YBC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
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