參數(shù)資料
    型號(hào)： K4S643232C
    廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
    英文描述： Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70
    中文描述： 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
    文件頁(yè)數(shù)： 29/43頁(yè)
    文件大?。?/td> 1155K
    代理商： K4S643232C
    0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
    CMOS SDRAM
    K4S643232C
    REV. 1.1 Nov. '99
    - 29
    Page Read & Write Cycle at Same Bank @Burst Length=4
    HIGH
    Row Active
    (A-Bank)
    Read
    (A-Bank)
    Write
    (A-Bank)
    Precharge
    (A-Bank)
    : Don't care
    *Note :
    1. To write data before burst read ends, DQM should be asserted three cycle prior to write
    command to avoid bus contention.
    2. Row precharge will interrupt writing. Last data input, t
    RDL
    before Row precharge, will be written.
    3. DQM should mask invalid input data on precharge command cycle when asserting precharge
    before end of burst. Input data after Row precharge cycle will be masked internally.
    4. For -55/60/70/80/10, tRDL=1CLK product can be supported within restricted amounts and it will be distinguished by bucket code
    "NV". From the next generation, tRDL will be only 2CLK for every clock frequency
    Read
    (A-Bank)
    tRCD
    *Note 2
    tRDL
    *Note 1
    *Note 3
    tCDL
    Qa0
    Qa1
    Qb0
    Qb1
    Qb2
    Qa0
    Qa1
    Qb0
    Qb1
    Dc0
    Dc1
    Dd0
    Dd1
    Dc0
    Dc1
    Dd0
    Dd1
    Write
    (A-Bank)
    BA
    0
    BA
    1
    A
    10
    /AP
    CL=2
    CL=3
    DQ
    ADDR
    CAS
    RAS
    CS
    CKE
    CLOCK
    WE
    DQM
    Ra
    Ca
    Cb
    Cc
    Cd
    Ra
    *Note 4
    相關(guān)PDF資料
    PDF描述
    K4S643232C-TC10 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
    K4S643232C-TC55 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
    K4S643232C-TC60 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
    K4S643232C-TC70 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
    K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    K4S643232C-TC/L10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
    K4S643232C-TC/L55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
    K4S643232C-TC/L60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
    K4S643232C-TC/L70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
    K4S643232C-TC/L80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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