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參數(shù)資料
| 型號： | K4S643232C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70 |
| 中文描述： | 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 22/43頁 |
| 文件大?。?/td> | 1155K |
| 代理商： | K4S643232C |
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K4S643232C
CMOS SDRAM
REV. 1.1 Nov. '99
- 22
X
X
X
CA, A
10
/AP
RA
A
10
/AP
X
OP code
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
RA, RA
10
X
X
X
X
CA, A
10
/AP
RA, RA
10
X
X
X
X
CA
RA
A
10
/AP
FUNCTION TRUTH TABLE (TABLE 1)
Current
State
CS
RAS
CAS
WE
BA
ADDR
ACTION
Note
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
IDLE
Row
Active
Read
Write
Read with
Auto
Precharge
Write with
Auto
Precharge
Pre-
charging
NOP
NOP
ILLEGAL
ILLEGAL
Row (& Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
Begin Read ; latch CA ; determine AP
Begin Write ; latch CA ; determine AP
ILLEGAL
Precharge
ILLEGAL
NOP (Continue Burst to End --> Row Active)
NOP (Continue Burst to End --> Row Active)
Term burst --> Row active
Term burst, New Read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, Precharge timing for Reads
ILLEGAL
NOP (Continue Burst to End --> Row Active)
NOP (Continue Burst to End --> Row Active)
Term burst --> Row active
Term burst, New read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, precharge timing for Writes
ILLEGAL
NOP (Continue Burst to End --> Precharge)
NOP (Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Continue Burst to End --> Precharge)
NOP (Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
RP
NOP --> Idle after t
RP
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
RP
L
X
X
X
BA
BA
BA
X
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
BA
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
H
L
H
H
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
H
L
X
H
L
2
2
4
5
5
2
2
3
2
3
3
2
3
2
2
2
2
2
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S643232C-TC10 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 |
| K4S643232C-TC55 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 |
| K4S643232C-TC60 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 |
| K4S643232C-TC70 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 |
| K4S643232E | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232C-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TC/L55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TC/L60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TC/L70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TC/L80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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