參數(shù)資料
型號: K4S643232C-TC10
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
中文描述: 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁數(shù): 11/43頁
文件大?。?/td> 1155K
代理商: K4S643232C-TC10
K4S643232C
CMOS SDRAM
REV. 1.1 Nov. '99
- 11
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A
1
Sequential
Interleave
A
0
0
0
1
1
0
1
0
1
0
1
2
3
1
2
3
0
2
3
0
1
3
0
1
2
0
1
2
3
1
0
3
2
2
3
0
1
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A
1
Sequential
Interleave
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
2
3
4
5
6
7
2
3
4
5
6
7
0
1
4
5
6
7
0
1
2
3
6
7
0
1
2
3
4
5
A
0
A
2
0
0
1
1
0
0
1
1
1
2
3
4
5
6
7
0
3
4
5
6
7
0
1
2
5
6
7
0
1
2
3
4
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
2
3
0
1
6
7
4
5
4
5
6
7
0
1
2
3
6
7
4
5
2
3
0
1
1
0
3
2
5
4
7
6
3
2
1
0
7
6
5
4
5
4
7
6
1
0
3
2
7
6
5
4
3
2
1
0
相關(guān)PDF資料
PDF描述
K4S643232C-TC55 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
K4S643232C-TC60 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
K4S643232C-TC70 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TE70 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S643232C-TC55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232CTC70 制造商:Samsung Semiconductor 功能描述:
K4S643232C-TC70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC70000 制造商:Samsung SDI 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II Tray