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參數(shù)資料
| 型號(hào)： | K4S641632K |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Mb K-die SDRAM |
| 中文描述： | 64兆的K - SDRAM內(nèi)存芯片 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 226K |
| 代理商： | K4S641632K |
K4S640832K
K4S641632K
Synchronous DRAM
Rev. 1.1 February 2006
9 of 14
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632K-T(U)C
4. K4S641632K-T(U)L
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
DC CHARACTERISTICS (x16)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C for x16 only)
Parameter
Symbol
Test Condition
Version
Unit
Note
50
60
75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
80
70
55
mA
1
Precharge standby current in
power-down mode
I
CC2
P
1
mA
I
CC2
PS
1
Precharge standby current in
non power-down mode
I
CC2
N
15
mA
I
CC2
NS
6
Active standby current in
power-down mode
I
CC3
P
3
mA
I
CC3
PS
3
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
30
mA
I
CC3
NS
25
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
110
100
85
mA
1
Refresh current
I
CC5
110
100
85
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
1
mA
3
L
400
uA
4
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|---|---|
| K4S641632K-T(U)C/L50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mb K-die SDRAM |
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| K4S641632K-T(U)C/L75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mb K-die SDRAM |
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| K4S641632K-TUC/L60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mb K-die SDRAM |
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