- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374278 > K4S281632B-TC1L (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S281632B-TC1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 128Mbit SDRAM的200萬× 16 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 108K |
| 代理商： | K4S281632B-TC1L |
K4S281632B
Rev. 0.0 Aug. 1999
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632B-TC**
4. K4S281632B-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
Parameter
Symbol
Test Condition
Version
Unit Note
-75
-80
-1H
-1L
-10
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
150
150
140
140
140
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
1
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
7
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
5
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
30
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
20
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
180
170
145
145
145
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
220
220
210
210
210
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
1.5
mA
3
L
800
uA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S281632B-TC10 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC80 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TL10 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S281632B-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TL10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TL1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TL1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。