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參數(shù)資料
| 型號： | K4S281632B-N |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP |
| 中文描述： | 200萬× 16 × 4銀行同步DRAM在sTSOP |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 145K |
| 代理商： | K4S281632B-N |
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.4 February. 2004
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
1.30
3.8
Volts/ns
3
Output rise time
trh
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50
to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50
to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
- 60 (x16 only)
Min
6
-
- 75
Unit
Note
Max
Min
7.5
10
Max
CLK cycle
time
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
t
CC
1000
1000
ns
1
CLK to valid
output delay
t
SAC
5
-
5.4
6
ns
1,2
Output data
hold time
t
OH
2.5
-
2.5
2.5
1.5
1.0
1
3
3
ns
2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
t
CH
t
CL
t
SS
t
SH
t
SLZ
2.5
2.5
1.5
0.8
1
ns
ns
ns
ns
ns
3
3
3
3
2
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
t
SHZ
5
-
5.4
6
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S281632B-NC/L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP |
| K4S281632B-NC/L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP |
| K4S281632B-TC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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