參數(shù)資料
型號(hào)： K4H640438A-TCA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER SINGLE 500mW 9.1Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.9 SOD-123 3K/REEL
中文描述： 128MB DDR SDRAM的
文件頁(yè)數(shù)： 43/53頁(yè)
文件大?。?/td> 669K
代理商： K4H640438A-TCA2
- 43 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
8. AC Operating Conditions & Timming Specification
8.1 AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
VREF + 0.31
V
V
V
V
1
2
3
4
VREF - 0.31
VDDQ+0.6
0.5*VDDQ+0.2
0.62
0.5*VDDQ-0.2
Note 1. Vih(max) = 4.2V. The overshoot voltage duration is
≤
3ns at VDD.
2. Vil(min) = -1.5V. The undershoot voltage duration is
≤
3ns at VSS.
3. VID is the magnitude of the difference between the input level on CK and the input on CK.
4. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
Table 13. AC operating conditions
I
DD7
: Operating current: Four bank operation
1. Typical Case : Vdd = 2.5V, T=25’C
2. Worst Case : Vdd = 2.7V, T= 10’C
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
相關(guān)PDF資料
PDF描述
K4H640438M-TCA0 DIODE ZENER DUAL COMMON-CATHODE 300mW 4.3Vz 5mA-Izt 0.0698 0.1uA-Ir SOT-23 3K/REEL
K4H1G0438M-TCA0 DIODE ZENER DUAL COMMON-CATHODE 300mW 5.1Vz 5mA-Izt 0.0588 0.1uA-Ir 0.8 SOT-23 3K/REEL
K4H640838M-TCA0 128Mb DDR SDRAM
K4H280838M-TCA0 DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL
K4H1G0838M-TCA0 128Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H640438A-TCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438A-TLA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438A-TLA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438A-TLB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H640438B-TCA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
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