- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373063 > K4H560838E-ZLB3 (SAMSUNG SEMICONDUCTOR CO. LTD.) Connector Kit; Contents Of Kit:C14610G0246001 24 position hood PG 21 double latch low profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | K4H560838E-ZLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Connector Kit; Contents Of Kit:C14610G0246001 24 position hood PG 21 double latch low profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
| 中文描述： | 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛60 FBGA封裝，免費（符合RoHS） |
| 文件頁數(shù)： | 17/19頁 |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838E-ZLB3 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR400 devices to ensure proper system perfor-
mance. these characteristics are for system simulation purposes and are guaranteed by design.
Rev. 1.1 August. 2003
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
i
+/- 0.25 V/ns
+50
+50
ps
i
+/- 0.5 V/ns
+100
+100
ps
i
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g
AC CHARACTERISTICS
DDR400
PARAMETER
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
-
-
e,k
Table 1 :
Input Slew Rate for DQ, DQS, and DM
Table 2
:
Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
AC CHARACTERISTICS
DDR400
PARAMETER
SYMBOL
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
0.5
4.0
V/ns
a, k
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
0
ps
h
0.4 V/ns
+50
0
ps
h
0.3 V/ns
+100
0
ps
h
Input Slew Rate
tDS
tDH
Units
Notes
0.5 V/ns
0
0
ps
j
0.4 V/ns
+75
+75
ps
j
0.3 V/ns
+150
+150
ps
j
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-ZCA2 | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838A-TCA0 | DIODE ZENER SINGLE 150mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-523 3K/REEL |
| K4H560838D-GCA2 | DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL |
| K4H560838D-GCB0 | DIODE ZENER SINGLE 150mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-523 3K/REEL |
| K4H560838D-GCB3 | DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838F-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR400 SDRAM Specification |
| K4H560838F-TC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR SDRAM Specification |
| K4H560838F-TC/LAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR SDRAM Specification |
| K4H560838F-TC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR SDRAM Specification |
| K4H560838F-TC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。