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參數(shù)資料
| 型號： | K4H560438E-VLB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格54 sTSOP與鉛二無（符合RoHS） |
| 文件頁數(shù)： | 6/26頁 |
| 文件大?。?/td> | 291K |
| 代理商： | K4H560438E-VLB0 |
- 6 -
256Mb
DDR SDRAM
Rev. 2.2 Mar. ’03
Bank Select
Timing Register
A
R
R
R
C
Data Input Register
Serial to parallel
2Mx32
2Mx32
2Mx32
2Mx32
S
2
O
I
Column Decoder
Latency & Burst Length
Programming Register
D
S
G
ADD
LCKE
CK, CK
CKE
CS
RAS
CAS
WE
CK, CK
LCAS
LRAS
LCBR
LWE
LWCBR
L
L
CK, CK
32
32
16
16
LWE
LDM
x16
DQi
Data Strobe
Block Diagram (4Mbit x 16 I/O x 4 Banks)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560438E-VLB3 | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-ZC | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438B-TCB0 | 128Mb DDR SDRAM |
| K4H560438B-TLA0 | 128Mb DDR SDRAM |
| K4H560438B-TLA2 | 128Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560438E-VLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-ZC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438E-ZC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438E-ZC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438E-ZC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
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