- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374274 > K4H560438E-VLB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) PDF資料下載
參數(shù)資料
| 型號： | K4H560438E-VLB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格54 sTSOP與鉛二無（符合RoHS） |
| 文件頁數(shù)： | 26/26頁 |
| 文件大小： | 291K |
| 代理商： | K4H560438E-VLB0 |
- 26 -
DDR SDRAM
Rev. 2.2 Mar. ’03
K4H561638D
AC Operating Test Conditions
Input/Output Capacitance
(VDD=2.5, VDDQ=2.5V, TA= 25
°
C, f=1MHz)
Parameter
Symbol
Min
Max
Delta Cap(max)
Unit
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
CIN1
1.5
3.5
0.5
pF
Input capacitance( CK, CK )
CIN2
1.5
3.5
0.25
pF
Data & DQS input/output capacitance
COUT
3.5
5.5
0.5
pF
Input capacitance(DM)
CIN3
3.5
5.5
pF
Output Load Circuit (SSTL_2)
Output
Z0=50
C
LOAD
=30pF
V
REF
=0.5*V
DDQ
R
T
=50
V
tt
=0.5*V
DDQ
(V
DD
=2.5V, V
DDQ
=2.5V, T
A
= 0 to 70
°
C)
Parameter
Value
Unit
Note
Input reference voltage for Clock
0.5 * V
DDQ
V
Input signal maximum peak swing
1.5
V
Input signal minimum slew rate (for imput only)
0.5
V/ns
Input slew rate (I/O pins)
0.5
V/ns
Input Levels(V
IH
/V
IL
)
V
REF
+0.31/V
REF
-0.31
V
Input timing measurement reference level
V
REF
V
Output timing measurement reference level
V
tt
V
Output load condition
See Load Circuit
相關PDF資料 |
PDF描述 |
|---|---|
| K4H560438E-VLB3 | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-ZC | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438B-TCB0 | 128Mb DDR SDRAM |
| K4H560438B-TLA0 | 128Mb DDR SDRAM |
| K4H560438B-TLA2 | 128Mb DDR SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560438E-VLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-ZC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438E-ZC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438E-ZC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438E-ZC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
發(fā)布緊急采購，3分鐘左右您將得到回復。