參數(shù)資料
型號: K4H513238A-TCA0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DIODE ZENER SINGLE 200mW 8.2Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.2 SOD-323 3K/REEL
中文描述: 128MB DDR SDRAM的
文件頁數(shù): 24/53頁
文件大小: 669K
代理商: K4H513238A-TCA0
- 24 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.6 Write Interrupted by a Write
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric-
tion that the interval that separates the commands must be at least one clock cycle. When the previous burst
is interrupted, the remaining addresses are overridden by the new address and data will be written into the
device until the programmed burst length is satisfied.
Command
< Burst Length=4 >
NOP
WRITE A
WRITE b
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
s
Din A
0
Din A
1
Din B
0
Din B
1
Din B
2
Din B
3
1t
CK
2
0
1
5
3
4
8
6
7
CK
CK
Figure 14. Write interrupted by a write timing
相關(guān)PDF資料
PDF描述
K4H1G3238A-TCA0 DIODE ZENER SINGLE 150mW 8.2Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.2 SOD-523 3K/REEL
K4H640438A-TCA2 DIODE ZENER SINGLE 500mW 9.1Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.9 SOD-123 3K/REEL
K4H640438M-TCA0 DIODE ZENER DUAL COMMON-CATHODE 300mW 4.3Vz 5mA-Izt 0.0698 0.1uA-Ir SOT-23 3K/REEL
K4H1G0438M-TCA0 DIODE ZENER DUAL COMMON-CATHODE 300mW 5.1Vz 5mA-Izt 0.0588 0.1uA-Ir 0.8 SOT-23 3K/REEL
K4H640838M-TCA0 128Mb DDR SDRAM
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