參數(shù)資料
型號(hào)： K4H511638C-ZLB3
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Connector Kit; Contents Of Kit:C14610G0246008 24 position hood PG 21 double latch high profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes
中文描述： 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格
文件頁(yè)數(shù)： 17/24頁(yè)
文件大?。?/td> 367K
代理商： K4H511638C-ZLB3
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system
performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 :
Input Slew Rate for DQ, DQS, and DM
Table 2
:
Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR333
DDR266
DDR200
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
TBD
TBD
TBD
0.5
4.0
V/ns
a, m
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
0
ps
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Input Slew Rate
tDS
tDH
Units
Notes
0.5 V/ns
0
0
ps
k
0.4 V/ns
+75
+75
ps
k
0.3 V/ns
+150
+150
ps
k
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
AC CHARACTERISTICS
DDR266B
DDR200
PARAMETER
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
TBD
0.67
1.5
e,m
20.0 System Characteristics for DDR SDRAM
相關(guān)PDF資料
PDF描述
K4H510438C-ZCCC 512Mb C-die DDR SDRAM Specification
K4H511638C-ZCCC 512Mb C-die DDR SDRAM Specification
K4H510438C-ZCB3 512Mb C-die DDR SDRAM Specification
K4H511638C-ZCB3 CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM
K4H511638A-TCA0 DIODE ZENER SINGLE 150mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-523 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H511638C-ZLCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification
K4H511638D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide
K4H511638D-LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H511638D-LB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H511638D-LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
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