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參數(shù)資料
| 型號： | K4H511638C-ZLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Connector Kit; Contents Of Kit:C14610G0246008 24 position hood PG 21 double latch high profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
| 中文描述： | 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4H511638C-ZLB3 |
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
(V
DD
=2.7V, T = 10
°
C)
15.0 DDR SDRAM IDD spec table
Symbol
128Mx4 (K4H510438C)
A2(DDR266@CL=2.0)
Unit Notes
B3(DDR333@CL=2.5)
B0(DDR266@CL=2.5)
IDD0
105
95
95
mA
IDD1
135
125
125
mA
IDD2P
5
5
5
mA
IDD2F
30
30
30
mA
IDD2Q
25
25
25
mA
IDD3P
30
30
30
mA
IDD3N
45
45
45
mA
IDD4R
140
125
125
mA
IDD4W
150
130
130
mA
IDD5
205
195
195
mA
IDD6
Normal
5
5
5
mA
Low power
3
3
3
mA
Optional
IDD7A
360
325
325
mA
Symbol
64Mx8 (K4H510838C)
Unit Notes
CC(DDR400@CL=3)
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
120
105
95
95
mA
IDD1
150
135
125
125
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
45
30
30
30
mA
IDD3N
60
45
45
45
mA
IDD4R
155
140
125
125
mA
IDD4W
175
150
130
130
mA
IDD5
220
205
195
195
mA
IDD6
Normal
5
5
5
5
mA
Low power
3
3
3
3
mA
Optional
IDD7A
385
360
325
325
mA
Symbol
32Mx16 (K4H511638C)
Unit Notes
CC(DDR400@CL=3)
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
120
105
95
95
mA
IDD1
160
140
130
130
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
45
30
30
30
mA
IDD3N
60
45
45
45
mA
IDD4R
190
170
155
155
mA
IDD4W
215
185
160
160
mA
IDD5
220
205
195
195
mA
IDD6
Normal
5
5
5
5
mA
Low power
3
3
3
3
mA
Optional
IDD7A
400
380
345
345
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510438C-ZCCC | 512Mb C-die DDR SDRAM Specification |
| K4H511638C-ZCCC | 512Mb C-die DDR SDRAM Specification |
| K4H510438C-ZCB3 | 512Mb C-die DDR SDRAM Specification |
| K4H511638C-ZCB3 | CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM |
| K4H511638A-TCA0 | DIODE ZENER SINGLE 150mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-523 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H511638C-ZLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification |
| K4H511638D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| K4H511638D-LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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