參數(shù)資料
型號(hào)： K4H281638M-TCA0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER DUAL COMMON-CATHODE 300mW 7.5Vz 5mA-Izt 0.0604 0.1uA-Ir 5 SOT-23 3K/REEL
中文描述： 128MB DDR SDRAM的
文件頁(yè)數(shù)： 24/53頁(yè)
文件大?。?/td> 669K
代理商： K4H281638M-TCA0
- 24 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.6 Write Interrupted by a Write
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric-
tion that the interval that separates the commands must be at least one clock cycle. When the previous burst
is interrupted, the remaining addresses are overridden by the new address and data will be written into the
device until the programmed burst length is satisfied.
Command
< Burst Length=4 >
NOP
WRITE A
WRITE b
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
Din A
0
Din A
1
Din B
0
Din B
1
Din B
2
Din B
3
1t
CK
2
0
1
5
3
4
8
6
7
CK
CK
Figure 14. Write interrupted by a write timing
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