參數(shù)資料
型號(hào)： K4H1G0838A-TCA0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER SINGLE 200mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-323 3K/REEL
中文描述： 128MB DDR SDRAM的
文件頁數(shù)： 49/53頁
文件大小： 669K
代理商： K4H1G0838A-TCA0
- 49 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
11.2 Half strength driver
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
0.0
0.5
1.0
1.5
2.0
2.5
I
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.
Vout(V)
相關(guān)PDF資料
PDF描述
K4H641638A-TCA0 DIODE ZENER SINGLE 150mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-523 3K/REEL
K4H281638A-TCA0 DIODE ZENER SINGLE 500mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-123 3K/REEL
K4H1G1638A-TCA0 DIODE ZENER SINGLE 500mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-123 3K/REEL
K4H643238A-TCA0 DIODE ZENER SINGLE 200mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-323 3K/REEL
K4H283238A-TCA0 DIODE ZENER SINGLE 150mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-523 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H1G0838A-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H1G0838A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H1G0838A-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H1G0838A-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H1G0838A-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*