- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374264 > K4H1G0438M-UCB3 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) PDF資料下載
參數(shù)資料
| 型號(hào)： | K4H1G0438M-UCB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 1Gb的的M -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁(yè)數(shù)： | 29/53頁(yè) |
| 文件大?。?/td> | 669K |
| 代理商： | K4H1G0438M-UCB3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)當(dāng)前第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)
- 29 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Command
< Burst Length=4, CAS Latency= 2, 2.5>
BANK A
ACTIVE
NOP
READ A
Auto Precharge
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
CAS Latency=2
Dout 0 Dout 1 Dout 2 Dout 3
t
RP
* completion of
precharge
Begin Auto-Precharge
DQS
DQ
′
s
CAS Latency=2.5
Dout 0 Dout 1 Dout 2 Dout 3
When the Read with Auto precharge command is issued, new command can be asserted at 3,4 and 5
respectively as follows,
Asserted
command
For same Bank
4
READ+
No AP
For Different Bank
4
3
5
3
5
READ
READ +
No AP
*1
Illegal
Legal
Legal
Legal
READ+AP
READ +
AP
READ +
AP
Illegal
Legal
Legal
Legal
Active
Precharge
*1
: AP = Auto Precharge
Illegal
Legal
Illegal
Legal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
Legal
2
0
1
5
3
4
8
6
7
t
RAS(min.)
CK
CK
3.3.11 Read With Auto Precharge
If a read with auto-precharge command is initiated, the DDR SDRAM automatically enters the precharge
operation BL/2 clock later from a read with auto-precharge command when tRAS(min) is satisfied. If not, the
start point of precharge operation will be delayed until tRAS(min) is satisfied. Once the precharge operation
has started the bank cannot be reactivated and the new command can not be asserted until the precharge
time(tRP) has been satisfied.
Figure 19. Read with auto precharge timing
Table 6. Operating description when new command asserted
while read with auto precharge is issued
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H1G0438M-ULA2 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-ULB0 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-ULB3 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0838D-TLA2 | 128Mb DDR SDRAM |
| K4H1G0838D-TLB0 | RES, CHIP 1K OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H1G0438M-ULA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-ULB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-ULB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0638C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
| K4H1G0638C-UC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。