參數(shù)資料
型號(hào): K4E641612C-45
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Extended Data Out
中文描述: 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出
文件頁(yè)數(shù): 27/36頁(yè)
文件大?。?/td> 884K
代理商: K4E641612C-45
CMOS DRAM
K4E661612C,K4E641612C
t
WCS
RAS
V
IH
-
V
IL
-
UCAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR
t
RASP
t
RP
t
ASR
t
CRP
Don
t care
HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
Undefined
LCAS
V
IH
-
V
IL
-
V
IH
-
V
IL
-
DQ0 ~ DQ7
V
IH
-
V
IL
-
DQ8 ~ DQ15
t
RPC
t
RHCP
t
RAD
t
RAH
t
CAH
t
CAH
t
ASC
t
CAH
t
ASC
VALID
DATA-IN
t
DS
ó
COLUMN
ADDRESS
COLUMN
ADDRESS
t
RCD
t
CRP
t
HPC
t
HPC
t
CAS
t
CP
t
CAS
t
CP
t
CAS
t
RSH
ó
t
CSH
t
ASC
ó
ó
t
WP
t
WCH
t
WP
t
WCS
t
WCH
t
WP
t
WCS
t
WCH
ó
ó
ó
VALID
DATA-IN
VALID
DATA-IN
ó
ó
t
DH
t
DS
t
DH
t
DS
t
DH
NOTE : D
OUT
= OPEN
ó
ó
t
RAL
相關(guān)PDF資料
PDF描述
K4E641612C-50 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-60 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-L 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612C-TC 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612C-TC45 4M x 16bit CMOS Dynamic RAM with Extended Data Out
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4E641612C-50 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-T45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out