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參數(shù)資料
| 型號： | K4E160812D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x20 mm; Packaging: Bulk |
| 中文描述： | 200萬× 8位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 20/21頁 |
| 文件大?。?/td> | 257K |
| 代理商： | K4E160812D |
K4E170811D, K4E160811D
K4E170812D, K4E160812D
CMOS DRAM
OPEN
CAS
- BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE, A = Don
′
t care
RAS
V
IH
-
V
IL
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CAS
V
IH
-
V
IL
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t
RPS
t
RASS
t
RPC
t
CP
t
RPC
t
CSR
t
CEZ
V
OH
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V
OL
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DQ0 ~ DQ3(7)
t
RP
Don
′
t care
Undefined
t
CHS
t
WRP
t
WRH
W
V
IH
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V
IL
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OPEN
TEST MODE IN CYCLE
NOTE : OE , A = Don
′
t care
RAS
V
IH
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V
IL
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CAS
V
IH
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V
IL
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t
RP
t
RC
t
RPC
t
CP
t
RPC
t
CSR
t
OFF
V
OH
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V
OL
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DQ0 ~ DQ3(7)
t
WTS
t
WTH
W
V
IH
-
V
IL
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t
CHR
t
RP
t
RAS
相關PDF資料 |
PDF描述 |
|---|---|
| K4E170811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170812D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E641611D-TC50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661611D | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661611D-TC50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4E170411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170412C-FC60 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 16M-Bit 4Mx4 3.3V 24-Pin TSOP-II |
| K4E170412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170811D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
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