參數(shù)資料
型號: K4D263238E-GC36
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL
中文描述: 100萬x 32Bit的× 4銀行圖形雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁數(shù): 2/17頁
文件大?。?/td> 310K
代理商: K4D263238E-GC36
128M GDDR SDRAM
K4D263238E-GC
- 2 -
Rev 1.7 (Nov. 2003)
Revision History
Revision 1.7 (November 14, 2003)
Typo corrected
Revision 1.6 (August 14, 2003)
Added a note for the input reference voltage of clock in case of differential clocks
Revision 1.5 (August 11, 2003)
Typo corrected
Revision 1.4 (April 30, 2003)
Added Lead free package part number in the datasheet
Revision 1.3 (April 14, 2003)
K4D263238E-GC2A/33/36 support wide voltage range from 2.375V to 2.94V
Revision 1.2 (April 7, 2003)
Removed K4D263238E-GL36 from the spec.
Revision 1.1 (March 17, 2003)
Typo corrected
Revision 1.0 (February 13, 2003)
Defined DC spec
Added K4D263238E-GC25 and K4D263238E-GL36 in the spec.
相關(guān)PDF資料
PDF描述
K4D263238E-GC40 DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL
K4D263238E-GC45 DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL
K4D263238G-GC 128Mbit GDDR SDRAM
K4D263238G-GC2A 128Mbit GDDR SDRAM
K4D263238G-GC33 128Mbit GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238E-GC40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F-QC40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F-QC50 制造商:Samsung Electro-Mechanics 功能描述:4M X 32 DDR DRAM, 0.7 ns, PQFP100