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參數(shù)資料
| 型號： | K4D263238E-GC36 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL |
| 中文描述： | 100萬x 32Bit的× 4銀行圖形雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 11/17頁 |
| 文件大小： | 310K |
| 代理商： | K4D263238E-GC36 |
128M GDDR SDRAM
K4D263238E-GC
- 11 -
Rev 1.7 (Nov. 2003)
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
°
C)
Note :
1. Measured with outputs open.
2. Refresh period is 32ms.
Parameter
Symbol
Test Condition
Version
Unit
Note
-25
-2A
-33
-36
-40
-45
Operating Current
(One Bank Active)
I
CC1
Burst Lenth=2
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
530
455
400
375
350
350
mA
1
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
110
95
80
80
75
70
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
185
150
130
125
115
110
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
200
160
140
130
120
120
mA
Active Standby Current
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
410
300
260
250
240
230
mA
Operating Current
( Burst Mode)
I
CC4
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
1090
830
735
680
625
570
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
(min)
415
350
310
310
300
290
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
3
mA
Operating Current
(4Bank interleaving)
I
CC7
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
1210
935
830
770
710
655
mA
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
3. 400MHz only
Note :
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 65
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage ;DQ
V
IH
V
REF
+0.35
-
-
V
V
REF
+0.4
-
-
V
3
Input Low (Logic 0) Voltage; DQ
V
IL
-
-
V
REF
-0.35
V
-
-
V
REF
-0.4
V
3
Clock Input Differential Voltage; CK and CK
V
ID
0.7
-
V
DDQ
+0.6
V
1
0.8
-
V
DDQ
+0.6
V
1, 3
Clock Input Crossing Point Voltage; CK and CK
V
IX
0.5*V
DDQ
-0.2
-
0.5*V
DDQ
+0.2
V
2
相關PDF資料 |
PDF描述 |
|---|---|
| K4D263238E-GC40 | DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL |
| K4D263238E-GC45 | DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL |
| K4D263238G-GC | 128Mbit GDDR SDRAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4D263238E-GC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E-GC45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238F-QC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238F-QC50 | 制造商:Samsung Electro-Mechanics 功能描述:4M X 32 DDR DRAM, 0.7 ns, PQFP100 |
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