參數(shù)資料
型號(hào)： K4D263238D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 16x31.5 mm; Packaging: Bulk
中文描述： 100萬(wàn)x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁(yè)數(shù)： 2/18頁(yè)
文件大?。?/td> 239K
代理商： K4D263238D
128M DDR SDRAM
K4D263238D
Revision History
Revision 1.3 (July 18, 2002)
Changed power dissipation from 2.0W to 1.8W
- 2 -
Rev. 1.3 (Jul. 2002)
Revision 1.2 (June 17, 2002)
Removed K4D263238D-QC55 from the spec.
183/166MHz were supported in K4D263238D-QC50.
Revision 1.1 (May 24, 2002)
Removed K4D263238D-QC45/60 from the spec
Revision 1.0 (May 20, 2002)
Define DC spec.
Revision 0.0 (April 23, 2002)-
Target spec
Define target spec.
相關(guān)PDF資料
PDF描述
K4D263238D-QC40 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D-QC50 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk
K4D263238E-GC25 DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC2A DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238D-QC40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D-QC50 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
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