- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374255 > K4D263238D (SAMSUNG SEMICONDUCTOR CO. LTD.) Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 16x31.5 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | K4D263238D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 16x31.5 mm; Packaging: Bulk |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 12/18頁 |
| 文件大小： | 239K |
| 代理商： | K4D263238D |
128M DDR SDRAM
K4D263238D
- 12 -
Rev. 1.3 (Jul. 2002)
AC OPERATING TEST CONDITIONS
(
V
DD
/ V
DDQ
=2.5V+ 5% ,
T
A
= 0 to 65
°
C)
Parameter
Value
Unit
Note
Input reference voltage for CK(for single ended)
0.50*V
DDQ
V
CK and CK signal maximum peak swing
1.5
V
CK signal minimum slew rate
1.0
V/ns
Input Levels(V
IH
/V
IL
)
V
REF
+0.35/V
REF
-0.35
V
Input timing measurement reference level
V
REF
V
Output timing measurement reference level
V
tt
V
Output load condition
See Fig.1
R
T
=50
Output
C
LOAD
=30pF
(Fig. 1) Output Load Circuit
Z0=50
V
REF
=0.5*V
DDQ
V
tt
=0.5*V
DDQ
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Symbol
Value
Unit
Decoupling Capacitance between V
DD
and V
SS
C
DC1
0.1 + 0.01
uF
Decoupling Capacitance between V
DDQ
and V
SSQ
C
DC2
0.1 + 0.01
uF
1. V
DD
and V
DDQ
pins are separated each other.
All V
DD
pins are connected in chip. All V
DDQ
pins are connected in chip.
2. V
SS
and V
SSQ
pins are separated each other
All V
SS
pins are connected in chip. All V
SSQ
pins are connected in chip.
Note :
CAPACITANCE
(V
DD
=2.5V, T
A
= 25
°
C, f=1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance( CK, CK )
C
IN1
1.0
5.0
pF
Input capacitance(A
0
~A
10
, BA
0
~BA
1
)
C
IN2
1.0
4.0
pF
Input capacitance
( CKE, CS, RAS,CAS, WE )
C
IN3
1.0
4.0
pF
Data & DQS input/output capacitance(DQ
0
~DQ
31
)
C
OUT
1.0
6.0
pF
Input capacitance(DM0 ~ DM3)
C
IN4
1.0
6.0
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D263238D-QC40 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC50 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E | Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk |
| K4D263238E-GC25 | DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL |
| K4D263238E-GC2A | DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D263238D-QC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E-GC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E-GC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。