參數(shù)資料
型號(hào): JS28F256J3A-115
廠商: Intel Corp.
英文描述: Intel StrataFlash Memory (J3)
中文描述: 英特爾StrataFlash存儲(chǔ)器(J3)
文件頁(yè)數(shù): 22/72頁(yè)
文件大?。?/td> 905K
代理商: JS28F256J3A-115
256-Mbit J3 (x8/x16)
22
Datasheet
7.0
AC Characteristics
7.1
Read Operations
Table 8. Read Operations (Sheet 1 of 2)
Asynchronous
Specifications
(All units in ns unless
otherwise noted)
V
CC
= 2.7 V–3.6 V
(3)
V
CCQ
= 2.7 V–3.6 V
(3)
Notes
Speed
Bin
-110
-115
-120
-125
-150
#
Sym
Parameter
Density
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
R1
t
AVAV
Read/Write
Cycle Time
32 Mbit
110
1,2
64 Mbit
115
120
1,2
128 Mbit
120
150
1,2
256 Mbit
125
1,2
R2
t
AVQV
Address to
Output Delay
32 Mbit
110
1,2
64 Mbit
115
120
1,2
128 Mbit
120
150
1,2
256 Mbit
125
1,2
R3
t
ELQV
CE
X
to Output
Delay
32 Mbit
110
1,2
64 Mbit
115
120
1,2
128 Mbit
120
150
1,2
256 Mbit
125
1,2
R4
t
GLQV
OE# to Non-
Array Output
Delay
50
50
50
50
50
1,2,4
R5
t
PHQV
RP# High to
Output Delay
32 Mbit
150
1,2
64 Mbit
180
180
1,2
128 Mbit
210
210
1,2
256 Mbit
210
R6
t
ELQX
CE
X
to Output in Low Z
0
0
0
0
0
1,2,5
R7
t
GLQX
OE# to Output in Low Z
0
0
0
0
0
1,2,5
R8
t
EHQZ
CE
X
High to Output in High
Z
35
35
35
35
35
1,2,5
R9
t
GHQZ
OE# High to Output in High
Z
15
15
15
15
15
1,2,5
R10
t
OH
Output Hold from Address,
CE
X
, or OE# Change,
Whichever Occurs First
0
0
0
0
0
1,2,5
R11
t
ELFL/
t
ELFH
CE
X
Low to BYTE# High or
Low
10
10
10
10
10
1,2,5
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