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參數(shù)資料
| 型號： | JDV2S19S |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1K1A, SESC, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 191K |
| 代理商： | JDV2S19S |
JDV2S19S
2005-08-03
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S19S
VCO for the UHF band
High capacitance ratio: C1V/C4V = 1.8 (typ.)
Low series resistance: rs = 0.35 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
3.46
3.87
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.83
2.13
pF
Capacitance ratio
C1V/C4V
1.74
1.91
Series resistance
rs
VR = 1 V, f = 470 MHz
0.35
0.47
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
M
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