參數(shù)資料
型號(hào)： JDV2S25SC
元件分類： 變?nèi)荻O管
英文描述： UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
封裝： LEAD FREE, SC2, 1-1R1A, 2 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 188K
代理商： JDV2S25SC
JDV2S25SC
2005-11-07
1
TOSHIBA Diode
Silicon Epitaxial Planar Type
JDV2S25SC
VCO for UHF Band Radio
High capacitance ratio : C1V/C4V = 2.9 (typ.)
Low series resistance : rs = 0.47 ohm (typ.)
A two-terminal ultra-small package supports high-density mounting
and the downsizing of end products.
Lead (Pb)-free.
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
5.57
5.93
Capacitance
C4V
VR = 4V, f = 1 MHz
1.88
2.08
pF
Capacitance ratio
C1V/C4V
2.81
3
Series resistance
rs
VR = 1 V, f = 470 MHz
0.47
0.62
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
0.
62±0.
03
0.
19±0.
02
0.
3±0.
03
0.32±0.03
0.
38
0.
19±0.
02
0.27±0.02
0.025±0.0
0.
025±0.
015
１：カソード
２：アノード
１
２
1.Anode
2.Cathode
JEDEC
JEITA
TOSHIBA
1-1R1A
Weight: 0.00017 g (typ.)
]
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
2
1
SC2
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PDF描述
JDV2S26FS UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
JDV2S26SC UHF BAND, 15.81 pF, SILICON, VARIABLE CAPACITANCE DIODE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JDV2S25SC(TPL3) 功能描述:變?nèi)荻O管 LOGIC VARACTOR Pb-F SC2 VC RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel
JDV2S26FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type
JDV2S26FS(TPL3) 功能描述:變?nèi)荻O管 LOGIC VARACTOR Pb-F FSC VC(HF) RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel
JDV2S26FSTPL3 制造商:Toshiba America Electronic Components 功能描述:JDV2S26FS(TPL3), DIODE
JDV2S28FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type
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