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參數(shù)資料
| 型號(hào)： | JANTXV2N6760 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | JANTXV2N6760 |
Case Outline and Dimensions — TO-204AA (Modified TO-3)
Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 5.5A, VGS = 10V, 25
≤
RG
≤
200
ISD
≤
5.5A, di/dt
≤
90A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
2
) * [BVDSS/(BVDSS-VDD)]
WORLD HEADQUARTERS:
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IR FAR EAST:
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IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
10/96
JANTX2N6760, JANTXV2N6760 Device
Fig. 13b — Basic Gate Charge Waveform
All dimensions are shown millimeters (inches)
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