參數(shù)資料
型號(hào): JANTX2N6849U
廠商: International Rectifier
英文描述: HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
中文描述: 的HEXFET晶體管(馬鞍山的HEXFET場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 129K
代理商: JANTX2N6849U
www.irf.com
1
Product Summary
Part Number
BV
DSS
R
DS(on)
0.30
I
D
IRFE9130
-100V
-6.5A
Features:
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
n
Small footprint
n
Surface Mount
n
Lightweight
Absolute Maximum Ratings
Parameter
IRFE9130, JANTX-, JANTXV-,JANS-,2N6849
Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction
TSTG
Storage Temperature Range
Surface Temperature
Weight
Units
ID @ VGS = -10V, TC = 25°C
-6.5
-4.1
25
25
0.20
±20
165
-30
W
W/K
V
mJ
V/ns
-55 to 150
300 ( for 5 seconds)
0.42 (typical)
g
P-CHANNEL
Provisional Data Sheet No. PD - 9.1716
-100Volt, 0.30
, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
o
C
A
1/5/98
IRFE9130
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
JANTX2N6849U
JANTXV2N6849U
JANS2N6849U
[REF:MIL-PRF-19500/564]
相關(guān)PDF資料
PDF描述
JANTXV2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANS2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANTX2N6849 HEXFET POWER MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
JANTX2N6851U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANTXV2N6851U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
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