參數(shù)資料
型號(hào)： JANTX2N6847
廠商： International Rectifier
英文描述： HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述： HEXFET功率MOSFET（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管）
文件頁數(shù)： 2/6頁
文件大?。?/td> 123K
代理商： JANTX2N6847
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min. Typ. Max. Units
—
—
6.25
Test Conditions
RthJA
Junction-to-Ambient
—
—
175
K/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
-2.5
-10
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-4.8
300
3.0
V
ns
μ
C
T
j
= 25°C, IS = -2.5A, VGS = 0V
Tj = 25°C, IF = -2.5A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
-200
—
Typ. Max. Units
—
—
-0.22
—
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
1.0
—
—
—
—
—
—
—
—
1.5
1.725
-4.0
—
-25
-250
VGS = -10V, ID = -1.6A
VGS = -10V, ID = -2.5A
VDS = VGS, ID = -250
μ
A
VDS > -15V, IDS = -1.6A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -2.5A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = -100V, ID = -2.5A,
RG = 7.5
,
VGS = -10V
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
4.0
1.1
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
-100
100
15
3.2
8.4
50
70
40
50
—
see figure 10
Modified MOSFET
symbol showing the
internal inductances.
LS
Internal Source Inductance
—
15.0
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
330
100
33
—
—
—
VGS = 0V, VDS = -25V
f = 1.0 MHz
see figure 5
JANTX2N6847, JANTXV2N6847 Device
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
nA
A
相關(guān)PDF資料
PDF描述
JANTX2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANTXV2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANS2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANTX2N6849 HEXFET POWER MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTX2N6847U 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 2.1A 18PIN LCC - Bulk
JANTX2N6849 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET (PFET) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET P-CH 100V 6.5A TO-205AF 制造商:International Rectifier 功能描述:Single P-Channel 100 V 25 W 34.8 nC Hexfet Transistor Through Hole - TO205 制造商:Microsemi 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
JANTX2N6849U 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 18LLCC - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET P-CH 100V 6.5A 18-LCC 制造商:International Rectifier 功能描述:HEXFET, HIREL,QPL,-100V, -6.5A, 0.30 OHM
JANTX2N685 制造商:Microsemi Corporation 功能描述:THYRISTOR SILICON PWR TO-208AA
JANTX2N6851 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 200V 4A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 4A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:Single P-Channel 200 V 25 W 34.8 nC Hexfet Transistors Through Hole - TO-39
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