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參數(shù)資料
| 型號(hào)： | JANSR2N7486U3 |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大小： | 133K |
| 代理商： | JANSR2N7486U3 |
www.irf.com
7
IRHNJ57230SE, JANSR2N7486U3
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
D D
DRIVER
A
15V
20V
GS
Pre-Irradiation
.
25
50
75
100
125
150
0
20
40
60
80
100
Starting T , Junction Temperature ( C)
E
ID
5.4A
9.6A
12A
TOP
BOTTOM
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|---|---|
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