參數(shù)資料
型號: JANSR2N7486U3
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
中文描述: 抗輻射功率MOSFET表面貼裝系統(tǒng)(SMD - 0.5)
文件頁數(shù): 3/8頁
文件大?。?/td> 133K
代理商: JANSR2N7486U3
www.irf.com
3
IRHNJ57230SE, JANSR2N7486U3
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Parameter
100K Rads (Si)
Min
200
2.0
Units
Test Conditions
Max
4.5
100
-100
10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=160V, V
GS
=0V
nA
μA
0.222
V
GS
= 12V, I
D
= 7.8A
R
DS(on)
V
SD
Diode Forward Voltage
1.2
V
V
GS
= 0V, I
D
= 12A
— 0.22
V
GS
= 12V, I
D
= 7.8A
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 200 200 200 200 200
I
59.8
341 32.5 200 200 200 185 120
Au
82.3
350 28.4 200 200 150
LET
Energy Range
V
DS
(V)
50
25
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
V
Br
I
Au
相關(guān)PDF資料
PDF描述
JANSR2N7488T3 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7489T3 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7497T2 30V N-Channel PowerTrench MOSFET
JANSR2N7498T2 RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
JANSR2N7500U5 RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANSR2N7486U3/CDDATAPACK 制造商:International Rectifier 功能描述:SPACE PART DATA - Virtual or Non-Physical Inventory (Software & Literature)
JANSR2N7488T3 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 130V 18A 3PIN TO-257AA - Rail/Tube
JANSR2N7489T3 制造商:International Rectifier 功能描述:JANSR2N7489T3 - Bulk
JANSR2N7491T2 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk
JANSR2N7492T2 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk