- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384553 > JANSR2N7424 (International Rectifier) HEXFET Transistor(HEXFET 晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | JANSR2N7424 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | JANSR2N7424 |
www.irf.com
3
IRHM9064, IRHM93064, JANSR2N7424
Radiation Pre-Irradiation
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-48
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
-48
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-100
-800
—
—
—
—
—
—
0.8
-100
-160
—
—
—
—
A
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of -12 volts per
note 6 and a V
DS
bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post-irra-
diation limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHM9064. Post-irradiation limits of devices
irradiated to 3 x 10
5
Rads(Si) are presented in Table
1, column 2, IRHM93064. The values in Table 1 will
Table 1. Low Dose Rate
Parameter
IRHM9064 IRHM93064
100K Rads (Si) 300K Rads (Si)
Units
Min
Max
Min
-60
—
-60
-2.0
-4.0
-2.0
—
-100
—
—
100
—
—
-25
—
—
0.05
—
Test Conditions
Max
—
-5.0
-100
100
-25
0.05
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
=-30A
nA
μA
V
SD
—
-3.0
—
-3.0
V
TC = 25°C, IS = -35A,V
GS
= 0V
be met for either of the two low dose rate test cir-
cuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide
a direct comparison. It should be noted that after an
irradiation level of 1 x 10
5
Rads (Si) no changes in
limits are specified in DC parameters. After an irra-
diation of 3 x 10
5
only the
V
GS(th)
max is affected.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 -60
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7426U | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| JANSF2N7426U | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| JANSR2N7440 | Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| JANSR2N7403 | 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET |
| JANSR2N7404 | 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7424U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7425 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| JANSR2N7425/SLDC | 制造商:International Rectifier 功能描述:SPACE PART SINGLE LOT DATECODE CHARGE - Virtual or Non-Physical Inventory (Software & Literature) |
| JANSR2N7425U | 制造商:International Rectifier 功能描述:JANSR2N7425U - Bulk |
| JANSR2N7426 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 27A 3PIN TO-254AA - Rail/Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。