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參數(shù)資料
| 型號： | JANSR2N7424 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | JANSR2N7424 |
IRHM9064, IRHM93064, JANSR2N7424
Pre-Irradiation
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-60
—
Typ
—
-0.056
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
-2.0
18
—
—
—
—
—
—
—
—
0.050
0.053
-4.0
—
-25
-250
VGS = -12V, ID =-30A
VGS = -12V, ID = -35A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -30A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -35A
VDS = Max Rating x 0.5
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
300
70
91
35
150
200
200
—
nC
VDD = -30V, ID = -35A,
RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6700
2800
920
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
nH
ns
Measured from drain
lead, 6mm (0.25 in) from
package to center of die.
Measured from source
lead, 6mm (0.25 in) from
package to source bond-
ing pad.
Modified MOSFET symbol
tances.
μ
A
Min Typ
—
—
Max Units
-35
-192
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
270
2.5
V
ns
μ
C
T
j
= 25°C, IS = -35A, VGS = 0V
Tj = 25°C, IF = -35A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
* Current is limited by pin diameter ( Die current is 48A , see fig. 4 & 9 )
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Case-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
0.50
—
48
W/°C
Typical socket mount
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