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參數(shù)資料
| 型號(hào)： | JANSR2N7406 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET |
| 中文描述： | 24 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | JANSR2N7406 |
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANS)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
±
20 (Note 7)
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
T
C
= 25
o
C at Rated I
D
±
25 (Note 7)
μ
A
Drain to Source On Resistance
r
DS(ON)
±
20% (Note 8)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
±
20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANS
Unclamped Inductive Switching
V
GS(PEAK)
= -15V, L = 0.1mH; Limit = 30A
Thermal Response
t
H
= 100ms; V
H
= -25V; I
H
= 1A; Limit = 85mV
Gate Stress
V
GS
= -30V, t = 250
μ
s
Pind
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
PDA
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
V
DS
= -80V, t = 10ms
1.9
A
Thermal Impedance
V
SD
t
H
= 500ms; V
H
= -25V; I
H
= 1A
125
mV
JANSR2N7440
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