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參數(shù)資料
| 型號： | JANSG2N7467U2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET |
| 中文描述： | 抗輻射功率MOSFET |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | JANSG2N7467U2 |
www.irf.com
5
IRHNA57Z60, JANSR2N7467U2
!
!
"
""
#$
0.1
1
10
100
1000
0.0
0.5
V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
0
25
50
Q , Total Gate Charge (nC)
75
100
125
150
175
200
225
0
5
10
15
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
45 A
V
= 15V
DS
V
= 24V
DS
1
10
100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
oss
C
iss
C
rss
Pre-Irradiation
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
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