- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384552 > JANSF2N7482T3 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) PDF資料下載
參數(shù)資料
| 型號： | JANSF2N7482T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對257AA） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 143K |
| 代理商： | JANSF2N7482T3 |
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA
R
DS(on)
Static Drain-to-Source
— 0.025 — 0.03
V
GS
= 12V, I
D
=18A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.03 — 0.035
V
GS
= 12V, I
D
=18A
On-State Resistance (TO-257AA)
V
SD
Diode Forward Voltage
— 1.2 — 1.2
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=24V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHY57Z30CM (JANSR2N7482T3), IRHY53Z30CM (JANSF2N7482T3) and IRHY54Z30CM (JANSG2N7482T3)
2. Part number IRHY58Z30CM (JANSH2N7482T3)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 18A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
IRHY57Z30CM, JANSR2N7482T3
www.irf.com
3
nA
V
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Cu
28
261 40 30 30 30 25 15
Br
37
285 37 30 30 30 23 15
I
60
344 33 25 25 20
LET
Energy Range
V
DS
(V)
15
8
0
5
10
15
20
25
30
35
-20
-15
-10
-5
0
VGS
V
Cu
Br
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSG2N7482T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| JANSH2N7482T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| JANSR2N7482T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| JANSF2N7491T2 | 30V N-Channel PowerTrench MOSFET |
| JANSG2N7491T2 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSF2N7483T3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7484T3 | 制造商:International Rectifier 功能描述:100V 8.000A HEXFET RADHARD - Rail/Tube |
| JANSF2N7486U3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7489T3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7491T2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。