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參數(shù)資料
| 型號： | JANSF2N7470T1 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 182K |
| 代理商： | JANSF2N7470T1 |
IRHMS57064, JANSR2N7470T1
Footnotes:
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.81 mH
Peak IL = 45A, VGS = 12V
ISD
≤
45A, di/dt
≤
390A/
μ
s,
VDD
≤
60V, TJ
≤
150°C
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.
Data and specifications subject to change without notice. 07/2006
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C
14.48 [.570]
12.95 [.510]
0.36 [.014]
B A
1.14 [.045]
0.89 [.035]
2X
3.81 [.150]
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
1
2
3
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
B
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
NOTES:
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
Case Outline and Dimensions — Low-Ohmic TO-254AA
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