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參數(shù)資料
| 型號： | JANSF2N7470T1 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 182K |
| 代理商： | JANSF2N7470T1 |
www.irf.com
7
Pre-Irradiation
IRHMS57064, JANSR2N7470T1
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
400
800
1200
1600
2000
EA
ID
TOP 20A
28.5A
BOTTOM 45A
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| JANSG2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSH2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSR2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSF2N7482T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
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