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參數(shù)資料
| 型號(hào)： | JANSF2N7382 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | JANSF2N7382 |
IRHY9130CM, IRHY93130CM Device
Radiation Characteristics
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-80
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
-80
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-60
-800
—
—
—
—
—
—
0.5
-60
-160
—
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(μm)
~41
V
DS
Bias
(V)
-100
V
GS
Bias
(V)
+5
Parameter
Typical
Units
Ion
BV
DSS
-100
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identi-
cal and are presented in Table 1, column 1,
IRHY9130CM. The values in Table 1 will be met for
either of the two low dose rate test circuits that are
used. Both pre- and post-radiation performance are
tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level of
3 x 10
5
Rads (Si) no changes in limits are specified in
DC parameters.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-channel
HEXFETS are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D.
International Rectifier radiation hardened P-Channel
HEXFETs have been characterized in neutron and
heavy ion Single Event Effects (SEE) environments.
Single Event Effects characterization is shown in Table
3.
Table 1. Low Dose Rate
Parameter
IRHY9130CMIRHY93130CM
100K Rads (Si) 300K Rads (Si)
Units
Min
Max
Min
-100
—
-100
-2.0
-4.0
-2.0
—
-100
—
—
100
—
—
-25
—
—
0.30
—
Test Conditions
Max
—
-5.0
-100
100
-25
0.30
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
=-7A
nA
μA
V
SD
—
-3.0
—
-3.0
V
TC = 25°C, IS = -11A,V
GS
= 0V
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