參數(shù)資料
型號(hào)： JAN2N6299
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 功率晶體管
英文描述： PNP DARLINGTON POWER SILICON TRANSISTOR
中文描述： 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-213AA
封裝： TO-66, 2 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 65K
代理商： JAN2N6299
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 540
Devices
Qualified Level
2N6298
2N6299
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6298 2N6299
V
CEO
60
V
CBO
60
V
EBO
I
B
I
C
P
T
Units
Vdc
Vdc
Vdc
mAdc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
C
= 0
0
C
(1)
T
C
= 100
0
C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.428 W/
0
C above T
C
> 0
0
C
80
80
5.0
120
8.0
75
32
@
T
OP
,
T
STG
-65 to +175
Symbol
R
θ
JC
Max.
2.33
Unit
0
C/W
TO-66* (TO-213AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc
V
CE
= 40 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Symbol
Min.
Max.
Unit
2N6298
2N6299
V
(BR)
CEO
60
80
Vdc
2N6298
2N6299
I
CEO
0.5
0.5
0.5
0.5
mAdc
2N6298
2N6299
I
CEX
mAdc
I
EBO
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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