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參數(shù)資料
| 型號(hào)： | JAN2N6546 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | JAN2N6546 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 525
Devices
Qualified Level
2N6546
2N6547
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CEX
V
EBO
I
B
I
C
2N6546
300
600
2N6547
400
850
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Between T
C
= +25
0
C and T
C
= +200
0
C, linear derating factor (average) = 1.0 W/
0
C
8
10
15
175
100
@ T
C
= +25
0
C
(1)
@ T
C
= +100
0
C
(1)
P
T
T
op,
T
stg
-65 to +200
Symbol
R
θ
JC
Max.
1.0
Unit
0
C/W
TO-3 (TO-204AA)*
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 600 Vdc; V
BE
= 1.5 Vdc
V
CE
= 850 Vdc; V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 8 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N6546
2N6547
V
(BR)
CEO
300
400
Vdc
2N6546
2N6547
I
CEX
1.0
1.0
mAdc
I
EBO
1.0
mAdc
120101
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