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參數資料
| 型號： | JAN2N3847 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 20 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-63 |
| 封裝： | TO-63, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 67K |
| 代理商： | JAN2N3847 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 412
Devices
Qualified Level
2N3846
2N3847
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N3846
200
300
2N3847
300
400
10
20
4.0
150
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 26.6 mW/
0
C to +175
0
C
2) Derate linearly 2 W/
0
C to +175
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
P
T
T
op,
T
stg
Symbol
R
θ
JC
Max.
0.5
Unit
0
C/W
TO-63*
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc; I
B
= 0
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc; V
BE
= 0
V
CE
= 400 Vdc; V
BE
= 0
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc; I
B
= 0
V
CE
= 300 Vdc; I
B
= 0
Emitter-Base Cutoff Current
V
BE
= 10 Vdc; I
C
= 0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N3846
2N3847
V
(BR)
CEO
200
300
Vdc
2N3846
2N3847
I
CES
2
2
mAdc
2N3846
2N3847
I
CEO
5
5
mAdc
I
EBO
250
μ
Adc
120101
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